Influence of GaN capping on performance of InAlN/AlN/GaN...

physica status solidi (c) 2008 Vol. 5; Iss. 6

Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al2O3 gate insulation grown by CVD

G. Pozzovivo, J. Kuzmik, S. Golka, K. Čičo, K. Fröhlich, J.-F. Carlin, M. Gonschorek, N. Grandjean, W. Schrenk, G. Strasser, D. Pogany
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Volume:
5
Year:
2008
Language:
english
Pages:
3
DOI:
10.1002/pssc.200778528
File:
PDF, 413 KB
english, 2008
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