High breakdown voltage AlGaN/GaN heterojunction field...

physica status solidi (c) 2008 Vol. 5; Iss. 6

High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire

Junxia Shi, Y. C. Choi, M. Pophristic, M. G. Spencer, L. F. Eastman
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Volume:
5
Year:
2008
Language:
english
Pages:
3
DOI:
10.1002/pssc.200778691
File:
PDF, 193 KB
english, 2008
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