Improvement in crystalline quality of thick GaInN on...

physica status solidi (c) 2008 Vol. 5; Iss. 9

Improvement in crystalline quality of thick GaInN on m-plane 6H-SiC substrates using sidewall epitaxial lateral overgrowth

Ryota Senda, Aya Miura, Takeshi Kawashima, Daisuke Iida, Tetsuya Nagai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
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Volume:
5
Year:
2008
Language:
english
Pages:
3
DOI:
10.1002/pssc.200779252
File:
PDF, 275 KB
english, 2008
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