DC characteristics of AlGaN/GaN high electron mobility...

physica status solidi (c) 2008 Vol. 5; Iss. 9

DC characteristics of AlGaN/GaN high electron mobility transistors

Masaki Inada, Akira Nakajima, Guanxi Piao, Mitsuaki Shimizu, Yoshiki Yano, Akinori Ubukata
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Volume:
5
Year:
2008
Language:
english
Pages:
3
DOI:
10.1002/pssc.200779263
File:
PDF, 255 KB
english, 2008
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