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Electron microscopy investigation of extended defects in a-plane gallium nitride layers grown on r-plane sapphire by molecular beam epitaxy
J. Smalc-Koziorowska, Ph. Komninou, S.-L. Sahonta, J. Kioseoglou, G. Tsiakatouras, A. GeorgakilasVolume:
5
Year:
2008
Language:
english
Pages:
4
DOI:
10.1002/pssc.200780211
File:
PDF, 216 KB
english, 2008