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Benefits of negative polarization charge in n -InGaN on p -GaN single heterostructure light emitting diode with p -side down
M. L. Reed, E. D. Readinger, C. G. Moe, H. Shen, M. Wraback, A. Syrkin, A. Usikov, O. V. Kovalenkov, V. A. DmitrievVolume:
6
Year:
2009
Language:
english
Pages:
4
DOI:
10.1002/pssc.200880401
File:
PDF, 301 KB
english, 2009