Epitaxial design of 475 nm InGaN laser diodes with reduced...

physica status solidi (c) 2009 Vol. 6; Iss. Supplement

Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift

Désirée Queren, Adrian Avramescu, Marc Schillgalies, Matthias Peter, Tobias Meyer, Georg Brüderl, Stephan Lutgen, Uwe Strauß
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Volume:
6
Year:
2009
Language:
english
Pages:
1
DOI:
10.1002/pssc.200880783
File:
PDF, 231 KB
english, 2009
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