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Influence of substrate dislocation density and quantum well width on the quantum efficiency of violet-emitting GaInN/GaN light-emitting diodes
Thorsten Passow, Markus Maier, Michael Kunzer, Crenguta-Columbina Leancu, Shangjing Liu, Joachim Wiegert, Ralf Schmidt, Klaus Köhler, Joachim WagnerVolume:
6
Year:
2009
Language:
english
Pages:
1
DOI:
10.1002/pssc.200880789
File:
PDF, 176 KB
english, 2009