High-performance UV detector based on AlGaN/GaN junction...

physica status solidi (c) 2009 Vol. 6; Iss. Supplement

High-performance UV detector based on AlGaN/GaN junction heterostructure-field-effect transistor with a p-GaN gate

Motoaki Iwaya, Shuichi Miura, Takahiro Fujii, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
6
Year:
2009
Language:
english
Pages:
1
DOI:
10.1002/pssc.200880815
File:
PDF, 253 KB
english, 2009
Conversion to is in progress
Conversion to is failed