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Enhancement in electrical properties of GaN heterostructure field-effect transistor by Si atom deposition on AlGaN barrier surface
Norio Onojima, Nobumitsu Hirose, Takashi Mimura, Toshiaki MatsuiVolume:
6
Year:
2009
Language:
english
Pages:
1
DOI:
10.1002/pssc.200880830
File:
PDF, 347 KB
english, 2009