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The effect of absorption layer of different quantum well arrangement on optoelectronic characteristics of nitride-based photovoltaic cells grown by MOCVD
Y. K. Fu, C. J. Tun, C. W. Kuo, C. H. Kuo, C. J. Pan, G. C. Chi, M. C. Chen, H. F. Hong, S. M. LanVolume:
6
Year:
2009
Language:
english
Pages:
1
DOI:
10.1002/pssc.200880877
File:
PDF, 170 KB
english, 2009