AlGaN/GaN high electron mobility transistor grown by...

physica status solidi (c) 2009 Vol. 6; Iss. Supplement

AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)

Y. Cordier, J.-C. Moreno, N. Baron, E. Frayssinet, S. Chenot, B. Damilano, F. Semond
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Volume:
6
Year:
2009
Language:
english
Pages:
1
DOI:
10.1002/pssc.200880878
File:
PDF, 180 KB
english, 2009
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