Strain engineering of AlGaN-GaN HFETs grown on 3 inch 4H-SiC
Frank Brunner, Outi Reentilä, Joachim Würfl, Markus WeyersVolume:
6
Year:
2009
Language:
english
Pages:
1
DOI:
10.1002/pssc.200880984
File:
PDF, 304 KB
english, 2009