Strain engineering of AlGaN-GaN HFETs grown on 3 inch...

Strain engineering of AlGaN-GaN HFETs grown on 3 inch 4H-SiC

Frank Brunner, Outi Reentilä, Joachim Würfl, Markus Weyers
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Volume:
6
Year:
2009
Language:
english
Pages:
1
DOI:
10.1002/pssc.200880984
File:
PDF, 304 KB
english, 2009
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