Engineered linearity of GaN-based HEMTs power devices by...

physica status solidi (c) 2009 Vol. 6; Iss. 6

Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics

Eldad Bahat-Treidel, Ibrahim Khalil, Oliver Hilt, Joachim Würfl, Günther Tränkle
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Volume:
6
Year:
2009
Language:
english
Pages:
4
DOI:
10.1002/pssc.200881505
File:
PDF, 338 KB
english, 2009
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