Nitridation of Si surface using ICP (inductively coupled...

Ferroelectrics 2001 / 01 Vol. 260; Iss. 1

Nitridation of Si surface using ICP (inductively coupled plasma) system for MeFIS-FET applications

Koo, June-Mo, Min, Hyung-Seob, Kim, Taeho, Lee, Wonhee, Lee, Jae-Gab, Kim, Jiyoung, Han, Jaeheon
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Volume:
260
Language:
english
Journal:
Ferroelectrics
DOI:
10.1080/00150190108016029
Date:
January, 2001
File:
PDF, 443 KB
english, 2001
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