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Electrical properties of nitrogen-related defects in n-type GaAsN grown by molecular-beam epitaxy
M. Shafi, R.H. Mari, M. Henini, D. Taylor, M. HopkinsonVolume:
6
Year:
2009
Language:
english
Pages:
3
DOI:
10.1002/pssc.200982561
File:
PDF, 153 KB
english, 2009