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Boron- and stoichiometry-related defect engineering during B2O3-free GaAs crystal growth
F.-M. Kiessling, M. Albrecht, K. Irmscher, M. Roßberg, P. Rudolph, W. Ulrici, R. FornariVolume:
6
Year:
2009
Language:
english
Pages:
7
DOI:
10.1002/pssc.200982580
File:
PDF, 188 KB
english, 2009