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Characteristics of He+-irradiated Ni Schottky diodes based on 4H-SiC epilayer grown by sublimation
A. M. Strel'chuk, A. V. Davydov, J. Tringe, T. Felter, A. A. Lebedev, V. V. Zelenin, A. N. Kuznetsov, C. G. StevensVolume:
6
Year:
2009
Language:
english
Pages:
3
DOI:
10.1002/pssc.200982584
File:
PDF, 191 KB
english, 2009