Structural defects due to interface steps and polytypism in...

Philosophical Magazine A 1997 / 01 Vol. 75; Iss. 1

Structural defects due to interface steps and polytypism in III-V semiconducting materials: A case study using high-resolution electron microscopy of the 2H-AlN/6H-SiC interface

Vermaut, P., Ruterana, P., Nouet, G., Morkoç, H.
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Volume:
75
Language:
english
Journal:
Philosophical Magazine A
DOI:
10.1080/01418619708210293
Date:
January, 1997
File:
PDF, 3.07 MB
english, 1997
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