Quantum chemical modelling of Si sub-surface amorphisation...

physica status solidi (c) 2010 Vol. 7; Iss. 3-4

Quantum chemical modelling of Si sub-surface amorphisation due to incorporation of H atoms and its stabilisation by O atoms

Alexander Pushkarchuk, Anis Saad, Vadim Pushkarchuk, Alexander Fedotov, Alexander Mazanik, Olga Zinchuk, Sergey Turishchev
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Volume:
7
Year:
2010
Language:
english
Pages:
1
DOI:
10.1002/pssc.200982689
File:
PDF, 329 KB
english, 2010
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