The annealing temperature effect on the electrical...

physica status solidi (c) 2010 Vol. 7; Iss. 3-4

The annealing temperature effect on the electrical properties of boron-doped hydrogenated amorphous silicon a-Si:H(B)

N. Khelifati, S. Tata, A. Rahal, R. Cherfi, A. Fedala, M. Kechouane, T. Mohammed-Brahim
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Volume:
7
Year:
2010
Language:
english
Pages:
1
DOI:
10.1002/pssc.200982718
File:
PDF, 222 KB
english, 2010
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