Variation of the Fermi level in n-type microcrystalline...

physica status solidi (c) 2010 Vol. 7; Iss. 3-4

Variation of the Fermi level in n-type microcrystalline silicon by electron bombardment and successive annealing: ESR and conductivity studies

Oleksandr Astakhov, Reinhard Carius, Yuri Petrusenko, Valeriy Borysenko, Dmytro Barankov, Friedhelm Finger
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Volume:
7
Year:
2010
Language:
english
Pages:
1
DOI:
10.1002/pssc.200982863
File:
PDF, 151 KB
english, 2010
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