Improved recess-ohmics in AlGaN/GaN high-electron-mobility...

physica status solidi (c) 2010 Vol. 7; Iss. 10

Improved recess-ohmics in AlGaN/GaN high-electron-mobility transistors with AlN spacer layer on silicon substrate

Subramaniam Arulkumaran, Ng Geok Ing, Vicknesh Sahmuganathan, Liu Zhihong, Bryan Maung
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Volume:
7
Year:
2010
Language:
english
Pages:
3
DOI:
10.1002/pssc.200983860
File:
PDF, 281 KB
english, 2010
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