Dopant profiles in silicon created by MeV hydrogen...

physica status solidi (c) 2011 Vol. 8; Iss. 3

Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters

J.G. Laven, H.-J. Schulze, V. Häublein, F.-J. Niedernostheide, H. Schulze, H. Ryssel, L. Frey
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Volume:
8
Year:
2011
Language:
english
Pages:
4
DOI:
10.1002/pssc.201000161
File:
PDF, 165 KB
english, 2011
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