Highly strained Si epilayers grown on SiGe/Si(100) virtual...

Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition

M. Myronov, V. A. Shah, A. Dobbie, Xue-Chao Liu, Van H. Nguyen, D. R. Leadley, E. H. C. Parker
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Volume:
8
Year:
2011
Language:
english
Pages:
4
DOI:
10.1002/pssc.201000255
File:
PDF, 501 KB
english, 2011
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