Study of oxygen clustering in Czochralski silicon at 450 °C–800 °C: correlation with thermal donors formation
B. Moumni, A. Ben Jaballah, S. Aouida, B. BessaïsVolume:
8
Year:
2011
Language:
english
Pages:
4
DOI:
10.1002/pssc.201000285
File:
PDF, 147 KB
english, 2011