“MBE-Litho”: 3 nm-thick amorphous GaAs oxidized thin film functioning as highly sensitive inorganic resist for EB lithography and oxide mask for selective processes
Kazuhiro Matsuda, Yuki Hirokawa, Shoji Ushio, Tadaaki KanekoVolume:
8
Year:
2011
Language:
english
Pages:
3
DOI:
10.1002/pssc.201000534
File:
PDF, 388 KB
english, 2011