55 nm gate ion-implanted GaN-HEMTs on sapphire and Si...

physica status solidi (c) 2011 Vol. 8; Iss. 7-8

55 nm gate ion-implanted GaN-HEMTs on sapphire and Si substrates

Hideo Katayose, Masanao Ohta, Kazuki Nomoto, Norio Onojima, Tohru Nakamura
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
8
Year:
2011
Language:
english
Pages:
3
DOI:
10.1002/pssc.201001017
File:
PDF, 285 KB
english, 2011
Conversion to is in progress
Conversion to is failed