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AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation
David Deen, David Storm, David Meyer, D. Scott Katzer, Robert Bass, Steven Binari, Theodosia GougousiVolume:
8
Year:
2011
Language:
english
Pages:
4
DOI:
10.1002/pssc.201001071
File:
PDF, 325 KB
english, 2011