Edge-field effects on gate capacitance, threshold voltage and low-field mobility in AlGaN/GaN HEMTs
Hyeongnam Kim, Michael L. Schuette, Wu LuVolume:
8
Year:
2011
Language:
english
Pages:
3
DOI:
10.1002/pssc.201001078
File:
PDF, 202 KB
english, 2011