![](/img/cover-not-exists.png)
Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate
Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Yoshinori Oshimura, Daisuke Iida, Motoaki Iwaya, Isamu AkasakiVolume:
8
Year:
2011
Language:
english
Pages:
3
DOI:
10.1002/pssc.201001081
File:
PDF, 284 KB
english, 2011