CL and dark field TEM analysis of composition change at...

physica status solidi (c) 2011 Vol. 8; Iss. 4

CL and dark field TEM analysis of composition change at interfaces in InGaP/GaAs junctions grown by MOCVD

C. Frigeri, A. A. Shakhmin, D. A. Vinokurov, M. V. Zamoryanskaya
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Volume:
8
Year:
2011
Language:
english
Pages:
4
DOI:
10.1002/pssc.201084004
File:
PDF, 349 KB
english, 2011
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