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Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation
R. Driad, R. Schmidt, L. Kirste, R. Loesch, M. Mikulla, O. AmbacherVolume:
9
Year:
2012
Language:
english
Pages:
4
DOI:
10.1002/pssc.201100228
File:
PDF, 338 KB
english, 2012