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[IEEE International Electron Devices and Materials Symposium - Hsinchu, Taiwan (12-15 July, 1994)] International Electron Devices and Materials Symposium - The effects of AlGaAs cap layers on the dc and speed performance of GaAs metal-semiconductor-metal photodetectors
Rong-Heng Yuang,, Jia-Lin Shieh,, Ray-Ming Lin,, Hung-Chang Shieh,, Jen-Inn Chyi,Year:
1994
Language:
english
DOI:
10.1109/edms.1994.863843
File:
PDF, 316 KB
english, 1994