[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Layer design for GaAs-based DHBTs enabling 28 V high-power microwave applications
Maassdorf, A., Kurpas, P., Doser, W., Brunner, F., Bergunde, T., Blanck, H., Wurfl, J., Weyers, M., Trankle, G.Year:
2003
Language:
english
DOI:
10.1109/iedm.2003.1269347
File:
PDF, 251 KB
english, 2003