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[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs
Moens, P., Banerjee, A., Uren, M. J., Meneghini, M., Karboyan, S., Chatterjee, I., Vanmeerbeek, P., Casar, M., Liu, C., Salih, A., Zanoni, E., Meneghesso, G., Kuball, M., Tack, M.Year:
2015
Language:
english
DOI:
10.1109/iedm.2015.7409831
File:
PDF, 1.26 MB
english, 2015