Characteristics of Three-Dimensional Simulation and Design of Fin Field Effect Transistors with 37∼18 nm Channel Length
Liou, Bor-WenVolume:
8
Language:
english
Journal:
Journal of Computational and Theoretical Nanoscience
DOI:
10.1166/jctn.2011.1931
Date:
October, 2011
File:
PDF, 10.51 MB
english, 2011