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Use of the Asymmetric Planar Hall Resistance of an Fe Film for Possible Multi-Value Memory Device Applications
Yoo, Taehee, Khym, S., Lee, Hakjoon, Lee, Sangyeop, Kim, Shinhee, Shin, Jinsik, Lee, Sanghoon, Liu, X., Furdyna, J. K.Volume:
11
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2011.4481
Date:
July, 2011
File:
PDF, 1.23 MB
english, 2011