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SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications II - Trieste, France (Sunday 23 May 1993)] Physical Concepts and Materials for Novel Optoelectronic Device Applications II - Influence of growth rate on the dopant confinement in delta-doped GaAs epitaxial layers grown by low-pressure metal organic vapor phase epitaxy
Li, G., Jagadish, Chennupati, Clark, Andrew, Larsen, C. A., Hauser, N., Beltram, Fabio, Gornik, ErichVolume:
1985
Year:
1993
DOI:
10.1117/12.162761
File:
PDF, 440 KB
1993