SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Transmission electron microscopy, photoluminescence, and capacitance spectroscopy on GaAs/Si grown by metal organic chemical vapor deposition
Bremond, Georges E., Said, Hicham, Guillot, Gerard, Meddeb, Jaafar, Pitaval, M., Draidia, Nasser, Azoulay, Rozette, Razeghi, ManijehVolume:
1361
Year:
1991
Language:
english
DOI:
10.1117/12.24436
File:
PDF, 998 KB
english, 1991