An Explicit Surface Potential Model of Bulk-MOSFETs with Inclusion of Poly-Gate Accumulation, Depletion, and Inversion Effects
Shi, Min, Song, Yan, Zhang, Zhenjuan, Sun, Ling, Wang, Qiang, He, Jin, Chan, MansunVolume:
9
Language:
english
Journal:
Journal of Computational and Theoretical Nanoscience
DOI:
10.1166/jctn.2012.2125
Date:
July, 2012
File:
PDF, 344 KB
english, 2012