SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Defect-induced stabilization of Fermi level in bulk silicon and at the silicon-metal interface
Iwanowski, Ryszard J., Tatarkiewicz, Jakub J., Razeghi, ManijehVolume:
1361
Year:
1991
Language:
english
DOI:
10.1117/12.24440
File:
PDF, 1.09 MB
english, 1991