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SPIE Proceedings [SPIE Optoelectronics and High-Power Lasers & Applications - San Jose, CA (Saturday 24 January 1998)] Photodetectors: Materials and Devices III - Large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors
Si, Sang-Kee, Kim, Sung-June, Lee, Ju-Han, Yeo, Deok Ho, Yoon, Kyung-Hun, Brown, Gail J.Volume:
3287
Year:
1998
Language:
english
DOI:
10.1117/12.304469
File:
PDF, 329 KB
english, 1998