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SPIE Proceedings [SPIE SPIE OPTO: Integrated Optoelectronic Devices - San Jose, CA (Saturday 24 January 2009)] Gallium Nitride Materials and Devices IV - Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy
Zhao, Hongping, Morkoç, Hadis, Litton, Cole W., Tong, Hua, Driscoll, Alexandra M., Chyi, Jen-Inn, Nanishi, Yasushi, Jamil, Muhammad, Huang, G. S., Piprek, Joachim, Yoon, Euijoon, Tansu, NelsonVolume:
7216
Year:
2009
Language:
english
DOI:
10.1117/12.808695
File:
PDF, 11.85 MB
english, 2009