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Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOSFETs
He, Jin, Xu, Yiwen, Chen, Lin, Zhang, Lining, Zhou, Xingye, Ma, Chenyue, Cao, Yu, Ye, Yun, Wang, Cheng, Liang, Hailang, Chan, MansunVolume:
10
Language:
english
Journal:
Journal of Computational and Theoretical Nanoscience
DOI:
10.1166/jctn.2013.2767
Date:
April, 2013
File:
PDF, 377 KB
english, 2013