Electrical Characterization of 1.2 kV-Class SiC MOSFET at...

Materials Science Forum 2016 / 5 Vol. 858

Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C

Nanen, Yuichiro, Aketa, Masatoshi, Nakano, Yuki, Asahara, Hirokazu, Nakamura, Takashi
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.885
Date:
May, 2016
File:
PDF, 401 KB
english, 2016
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