[IEEE 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual - San Jose, CA, USA (10-13 April 2000)] 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) - CMOSFET characteristics induced by moisture diffusion from inter-layer dielectric in 0.23 um DRAM technology with shallow trench isolation

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