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SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2005 - San Jose, California, United States (Saturday 22 January 2005)] Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX - Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy
Liang, W., Tsen, Kong-Thon, Song, Jin-Joo, Tsen, Kong-Thon, Poweleit, C., Jiang, Hongxing, Morkoc, HadisVolume:
5725
Year:
2005
Language:
english
DOI:
10.1117/12.592968
File:
PDF, 683 KB
english, 2005