SPIE Proceedings [SPIE 16th International Workshop on Physics of Semiconductor Devices - Kanpur, India (Monday 19 December 2011)] 16th International Workshop on Physics of Semiconductor Devices - A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT

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