Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage...

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IEEE Transactions on Circuits and Systems I: Regular Papers 2016

Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology

Yang, Younghwi, Jeong, Hanwool, Song, Seung Chul, Wang, Joseph, Yeap, Geoffrey, Jung, Seong-Ook
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Year:
2016
Language:
english
Journal:
IEEE Transactions on Circuits and Systems I: Regular Papers
DOI:
10.1109/TCSI.2016.2556118
File:
PDF, 4.01 MB
english, 2016
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